Metal Gate Technology for Fully Depleted SOI CMOS
نویسندگان
چکیده
This paper reviews recent approaches in the development of a tunable work function metal gate CMOS technology and describes the application of one such approach to the fabrication of metal gate fullydepleted (FD) SOI transistor structures such as the ultra-thin body (UTB) FET and the FinFET.
منابع مشابه
A 0.25- m, 600-MHz, 1.5-V, Fully Depleted SOI CMOS 64-Bit Microprocessor
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